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NEC's NPN SILICON TRANSISTOR NE851M03
FEATURES
* NEW MINIATURE M03 PACKAGE: - Small transistor outline - Low profile / 0.59 mm package height - Flat lead style for better RF performance IDEAL FOR 3 GHz OSCILLATORS LOW 1/f NOISE LOW PUSHING FACTOR
1.4 0.1 0.45 (0.9)
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
1.20.05
0.80.1
2
* * *
80
0.45
1 +0.1 0.2 -0
3
0.3 +0.1 -0
DESCRIPTION
NEC's NE851M03 transistor is designed for oscillator applications up to 3 GHz. The NE851M03 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's low profile/flat lead style "M03" package is ideal for today's portable wireless applications.
0.590.05
+0.1 0.15 -0.05
PIN CONNECTIONS 1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT fT |S21E|2 |S21E|2 NF CRE ICBO IEBO hFE PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz, Zs = Zopt Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain at VCE = 1 V, IC = 5 mA
2
NE851M03 2SC5800 M03 UNITS GHz GHz dB dB dB pF nA nA MIN 3.0 5.0 3.0 4.5 - - - - 100 TYP 4.5 6.5 4.0 5.5 1.9 0.6 - - 120 MAX - - - 2.5 0.8 600 600 145
Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Collector to base capacitance when the emitter is grounded
California Eastern Laboratories
NE851M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT2 TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 9.0 5.5 1.5 100 200 150 -65 to +150
ORDERING INFORMATION
PART NUMBER QUANTITY NE851M03-T1-A 3 k pcs./reel
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.0 mm (t) glass epoxy board.
TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance, Cre (pF)
300
REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
1.0 f = 1 MHz
Total Power Dissipation, Ptot (mW)
250
Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0 mm(t) )
0.8
200
0.6
150 100
0.4
50
0.2
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
Ambient Temperature, TA (C)
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
60
VCE = 1 V
400 A
360 A
320 A
Collector Current, IC (mA)
Collector Current, IC (mA)
80
50
40 30
280 A
60
240 A
200 A
40
20
160 A
120 A
20
10
80 A
0
IB = 40 A
0.2 0.4 0.6 0.8 1.0
0
1
2
3
4
5
6
7
Base to Emitter Voltage, VBE (V)
Collector to Emitter Voltage, VCE (V)
NE851M03 TYPICAL PERFORMANCE CURVES (TA = 25C)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
10 10 VCE = 1 V f = 2 GHz 8
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
VCE = 2 V f = 2 GHz 8
Gain Bandwidth Product, fT (GHz)
6
Gain Bandwidth Product, fT (GHz)
10 100
6
4
4
2
2
0
1
0
Collector Current, IC (mA)
1
10
100
Collector Current, IC (mA)
INSERTION POWER GAIN vs. FREQUENCY
35
INSERTION POWER GAIN vs. FREQUENCY
35
Insertion Power Gain, |S21e|2 (dB)
30 25 20 15 10 5 0 0.1
Insertion Power Gain, |S21e|2 (dB)
VCE = 1 V IC = 5 mA
30 25 20 15 10 5 0 0.1
VCE = 2 V IC = 5 mA
Frequency, f (GHz)
1
10
Frequency, f (GHz)
1
10
INSERTION POWER GAIN vs. FREQUENCY
35
INSERTION POWER GAIN vs. FREQUENCY
35
Insertion Power Gain, |S21e|2 (dB)
30 25 20 15 10 5 0 0.1
Insertion Power Gain, |S21e|2 (dB)
VCE = 1 V IC = 15 mA
30 25 20 15 10 5 0 0.1
VCE = 2 V IC = 15 mA
Frequency, f (GHz)
1
10
Frequency, f (GHz)
1
10
NE851M03 TYPICAL PERFORMANCE CURVES (TA = 25C)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20 20
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB)
MSG
15
MAG
MSG
15
MAG
10
|S21e|
2
10
|S21e|
2
5
VCE = 1 V f = 1 GHz
5
VCE = 2 V f = 1 GHz
0
1
10
100
0
1
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
INSERTION POWER GAIN and MAG vs. COLLECTOR CURRENT
15
INSERTION POWER GAIN and MAG vs. COLLECTOR CURRENT
15
Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB)
Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB)
VCE = 1 V f = 2 GHz
MAG
VCE = 2 V f = 2 GHz
MAG
10
10
5
|S21e|
2
5
|S21e|
2
0
0
-5
1
10
100
-5
1
Collector Current, IC (mA)
Collector Current, IC (mA)
10
100
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
10
INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT
10
Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S21e|2 (dB) Maximum Stable Gain, MSG(dB)
VCE = 1 V f = 4 GHz
MSG
VCE = 2 V f = 4 GHz
MSG
5
5
MAG
0
|S21e|
2
0
|S21e|
2
-5
-5
-10
1
10
100
-10
1
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
NE851M03 TYPICAL PERFORMANCE CURVES (TA = 25C)
NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT
4 VCE = 1 V f = 1 GHz
Ga
NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT
4 VCE = 2 V f = 1 GHz 16
Ga
16
Associated Gain, Ga (dB)
3
12
3
12
2
8
2
8
1
NF
4
1
NF
4
0
1
Collector Current, IC (mA)
10
0 100
0
1
Collector Current, IC (mA)
10
0 100
NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT
4 VCE = 1 V f = 2 GHz 18 4
NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT
VCE = 2 V f = 2 GHz 18
Associated Gain, Ga (dB)
Noise Figure, NF (dB)
Noise Figure, NF (dB)
3
12
3
Ga
12
Ga
2
8
2
NF
8
1
NF
4
1
4
0 1
Collector Current, IC (mA)
10
0 100
0 1
Collector Current, IC (mA)
10
0 100
OUTPUT POWER AND COLLECTOR CURRENT vs. INPUT POWER
25 20 VCE = 2 V, f = 1 GHz ICq = 5 mA (RF OFF) 80 70 25 20
OUTPUT POWER AND COLLECTOR CURRENT vs. INPUT POWER
VCE = 2 V, f = 2 GHz ICq = 5 mA (RF OFF) 80 70 60 50 40 30 20 IC 10 0
Output Power, POUT (dBm)
Output Power, POUT (dBm)
Collector Current, IC (mA)
15 10 5 0 -5 -10 -15 -20 IC
60 50 40 30 20 10 0
15 10 5 0 -5 -10 -15 -20
Pout
Pout
-15
-10
-5
0
5
10
-15
-10
-5
0
5
10
Input Power, PIN (dBm)
Input Power, PIN (dBm)
Collector Current, IC (mA)
Associated Gain, Ga (dB)
Associated Gain, Ga (dB)
Noise Figure, NF (dB)
Noise Figure, NF (dB)
NE851M03 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25
j100
+135
S21
+90
+45
S11
S12
j10
0
10
25
50
100
0
+180
2
4
6
8
1
0
2 S2
-j10
-135
-45
-j25 -j50
0.100 to 6.000 GHz by 0.100
-j100
-90
0.100 to 6.000 GHz by 0.100
NE851M03 VC = 1 V, IC = 5 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.700 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.824 0.748 0.705 0.679 0.673 0.666 0.664 0.665 0.664 0.665 0.664 0.665 0.666 0.666 0.666 0.666 0.666 0.667 0.667 0.667 0.668 0.669 0.669 0.670 0.669 0.669 0.671 0.670 0.672 0.671 0.673 0.675 0.680
S11 ANG -46.13 -80.11 -104.73 -121.76 -141.72 -155.88 -168.35 -171.53 -174.29 -176.88 -179.25 178.52 176.60 174.50 172.69 170.70 169.07 167.34 165.53 163.82 162.04 160.31 158.48 156.71 154.91 152.89 151.05 141.05 130.96 120.95 111.68 103.60 96.09 MAG 13.999 11.531 9.279 7.580 6.194 4.587 3.313 3.030 2.794 2.593 2.424 2.274 2.145 2.029 1.928 1.835 1.754 1.677 1.610 1.548 1.491 1.440 1.391 1.347 1.305 1.265 1.228 1.075 0.959 0.870 0.802 0.752 0.718
S21 ANG 152.23 131.89 118.04 108.36 98.80 89.15 78.69 75.69 72.95 70.20 67.64 65.18 62.84 60.56 58.37 56.25 54.18 52.01 50.17 48.31 46.50 44.69 42.95 41.25 39.67 38.08 36.56 29.73 24.15 19.76 16.38 13.83 11.88 MAG 0.033 0.051 0.062 0.067 0.068 0.072 0.078 0.081 0.083 0.086 0.090 0.094 0.098 0.103 0.109 0.115 0.121 0.128 0.135 0.143 0.152 0.160 0.169 0.179 0.189 0.199 0.209 0.266 0.326 0.387 0.445 0.498 0.545
S12 ANG 66.48 52.70 43.78 39.96 35.59 37.14 43.34 45.75 48.31 51.04 53.34 55.84 58.31 60.46 62.48 64.26 66.01 67.42 68.65 69.81 70.84 71.44 72.05 72.44 72.75 72.87 72.79 71.32 67.81 62.94 57.33 51.29 45.24 MAG 0.903 0.745 0.620 0.537 0.410 0.356 0.331 0.327 0.325 0.326 0.329 0.332 0.335 0.340 0.345 0.351 0.356 0.362 0.370 0.377 0.383 0.391 0.397 0.405 0.412 0.420 0.427 0.463 0.493 0.518 0.538 0.553 0.563
S22 ANG -21.08 -34.82 -42.24 -46.40 -53.91 -57.66 -62.07 -64.09 -65.91 -68.31 -70.20 -72.21 -74.41 -76.60 -78.64 -80.85 -83.15 -85.49 -87.59 -89.58 -91.66 -93.66 -95.62 -97.78 -99.60 -101.42 -103.43 -112.30 -121.04 -130.14 -139.86 -150.11 -160.44
K 0.089 0.187 0.283 0.368 0.510 0.677 0.872 0.924 0.976 1.010 1.039 1.056 1.065 1.071 1.066 1.064 1.056 1.039 1.021 1.004 0.983 0.959 0.944 0.920 0.903 0.888 0.868 0.808 0.775 0.778 0.798 0.830 0.865
MAG1 (dB) 26.32 23.51 21.75 20.54 19.57 18.03 16.26 15.75 15.26 14.15 13.11 12.40 11.82 11.31 10.91 10.49 10.17 9.96 9.87 9.96 9.93 9.53 9.15 8.77 8.39 8.03 7.68 6.07 4.69 3.52 2.56 1.79 1.19
Note: 1. Gain Calculations:
MAG =
MAG = Maximum Available Gain MSG = Maximum Stable Gain
|S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
NE851M03 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25
+90
j100
S21
+135 +45
S11
j10
S12
0
10
S2
25 2
50
100
0
+180
2
4
6
8
1
0
-j10
-135
-j25 -j50
0.100 to 6.000 GHz by 0.100
-45
-j100
-90
0.100 to 6.000 GHz by 0.100
NE851M03 VC = 2 V, IC = 10 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.700 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.695 0.624 0.595 0.582 0.609 0.608 0.608 0.610 0.609 0.608 0.608 0.608 0.609 0.609 0.608 0.607 0.606 0.607 0.606 0.605 0.606 0.606 0.605 0.606 0.604 0.603 0.604 0.602 0.604 0.607 0.614 0.625 0.638
S11 ANG -61.64 -100.58 -123.61 -137.95 -154.61 -165.54 -175.12 -177.63 -179.89 178.01 176.04 174.19 172.64 170.81 169.29 167.57 166.16 164.68 163.12 161.63 160.05 158.52 156.89 155.28 153.71 151.89 150.23 141.17 131.89 122.66 114.03 106.41 99.10 MAG 23.158 17.024 12.782 10.071 8.021 5.858 4.192 3.830 3.528 3.271 3.057 2.866 2.703 2.556 2.429 2.313 2.211 2.115 2.031 1.954 1.884 1.821 1.760 1.706 1.654 1.605 1.561 1.375 1.233 1.119 1.026 0.949 0.887
S21 ANG 144.21 122.63 110.30 102.30 95.02 87.23 78.55 76.03 73.70 71.35 69.13 66.99 64.95 62.92 60.94 59.01 57.16 55.16 53.46 51.71 50.01 48.31 46.64 44.97 43.40 41.82 40.28 33.08 26.63 20.91 15.94 11.68 8.19 MAG 0.026 0.038 0.044 0.049 0.052 0.060 0.075 0.080 0.086 0.091 0.097 0.104 0.110 0.117 0.124 0.131 0.138 0.146 0.154 0.162 0.170 0.178 0.186 0.196 0.205 0.214 0.223 0.272 0.323 0.376 0.428 0.477 0.523
S12 ANG 61.44 50.73 47.67 47.72 47.72 52.69 59.31 61.10 62.79 64.04 65.34 66.51 67.27 68.13 68.82 69.46 70.00 70.12 70.56 70.80 70.94 70.87 70.86 70.87 70.66 70.49 69.98 68.05 64.75 60.65 55.85 50.70 45.37 MAG 0.821 0.610 0.480 0.405 0.289 0.245 0.226 0.223 0.221 0.223 0.226 0.229 0.232 0.237 0.241 0.247 0.252 0.258 0.266 0.271 0.278 0.285 0.291 0.299 0.306 0.314 0.321 0.357 0.391 0.421 0.448 0.471 0.489
S22 ANG -29.68 -44.71 -51.39 -54.57 -65.42 -68.86 -72.02 -73.72 -75.21 -77.34 -78.57 -80.20 -81.76 -83.43 -85.04 -86.60 -88.61 -90.25 -91.95 -93.42 -94.93 -96.56 -98.07 -99.75 -101.10 -102.50 -104.02 -111.13 -118.23 -126.11 -134.94 -144.72 -154.78
K 0.183 0.335 0.469 0.583 0.727 0.876 0.984 1.005 1.026 1.039 1.044 1.045 1.043 1.040 1.033 1.027 1.023 1.011 0.999 0.990 0.979 0.966 0.957 0.941 0.931 0.922 0.907 0.862 0.823 0.805 0.799 0.805 0.821
MAG1 (dB) 29.48 26.51 24.63 23.13 21.91 19.91 17.48 16.36 15.15 14.33 13.69 13.12 12.63 12.18 11.81 11.45 11.11 10.96 11.21 10.82 10.45 10.10 9.75 9.41 9.08 8.76 8.45 7.04 5.81 4.73 3.80 2.99 2.30
Note: 1. Gain Calculations:
MAG =
MAG = Maximum Available Gain MSG = Maximum Stable Gain
|S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
NE851M03 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25
S11
+90
j100
+135
S21
+45
j10
S12
0
10
S2
25 2
50
100
0
+180
2
4
6
8
1
0
-j10
-135
-45
-j25 -j50
-j100
-90
NE851M03 VC = 3 V, IC = 20 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.700 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.555 0.525 0.519 0.518 0.570 0.572 0.573 0.574 0.573 0.573 0.572 0.572 0.571 0.571 0.570 0.568 0.567 0.566 0.566 0.564 0.564 0.563 0.562 0.562 0.559 0.558 0.558 0.554 0.555 0.558 0.567 0.581 0.599
0.100 to 6.000 GHz by 0.100
0.100 to 6.000 GHz by 0.100
S11 ANG -83.93 -123.08 -141.74 -152.59 -165.20 -173.28 179.45 177.46 175.59 173.85 172.20 170.60 169.35 167.72 166.42 164.85 163.64 162.32 160.87 159.57 158.12 156.71 155.22 153.77 152.31 150.61 149.11 140.64 132.00 123.35 115.32 108.18 101.26 MAG 33.100 21.477 15.332 11.824 9.286 6.730 4.793 4.376 4.030 3.736 3.490 3.272 3.086 2.918 2.772 2.641 2.524 2.415 2.321 2.233 2.155 2.082 2.013 1.953 1.895 1.840 1.791 1.583 1.426 1.300 1.196 1.109 1.034
S21 ANG 134.57 114.01 103.82 97.41 91.94 85.52 78.07 75.85 73.81 71.72 69.72 67.80 65.92 64.09 62.29 60.52 58.79 56.94 55.35 53.71 52.12 50.51 48.91 47.33 45.82 44.30 42.79 35.66 29.06 22.97 17.43 12.40 7.97 MAG 0.020 0.028 0.035 0.040 0.045 0.058 0.078 0.085 0.092 0.099 0.106 0.113 0.121 0.129 0.136 0.144 0.152 0.160 0.167 0.176 0.184 0.192 0.200 0.209 0.218 0.227 0.235 0.280 0.327 0.374 0.421 0.465 0.507
S12 ANG 59.16 53.63 55.51 58.95 60.56 64.80 68.73 69.69 70.12 70.66 71.00 71.20 71.30 71.48 71.38 71.29 71.21 71.07 70.95 70.63 70.33 69.89 69.69 69.30 68.85 68.41 67.76 65.12 61.75 57.82 53.51 48.92 44.18 MAG 0.705 0.469 0.355 0.295 0.203 0.170 0.156 0.154 0.153 0.156 0.159 0.162 0.164 0.169 0.173 0.177 0.182 0.188 0.194 0.200 0.205 0.212 0.218 0.225 0.231 0.238 0.245 0.280 0.313 0.345 0.374 0.400 0.423
S22 ANG -40.19 -55.38 -61.29 -63.99 -82.72 -87.94 -90.92 -92.65 -93.73 -95.63 -96.09 -97.01 -97.84 -98.85 -99.61 -100.52 -101.75 -102.94 -103.84 -104.57 -105.29 -106.25 -107.15 -108.26 -108.94 -109.85 -110.73 -115.50 -120.66 -127.21 -134.94 -143.93 -153.49
K 0.304 0.529 0.680 0.790 0.896 0.977 1.020 1.024 1.032 1.033 1.031 1.030 1.027 1.022 1.018 1.015 1.010 1.004 0.997 0.990 0.982 0.974 0.968 0.958 0.952 0.946 0.937 0.903 0.870 0.850 0.834 0.826 0.828
MAG1 (dB) 32.17 28.79 26.43 24.68 23.15 20.68 17.03 16.18 15.34 14.66 14.09 13.54 13.07 12.65 12.28 11.89 11.61 11.40 11.42 11.04 10.69 10.35 10.02 9.70 9.39 9.10 8.82 7.52 6.39 5.41 4.54 3.77 3.09
Note: 1. Gain Calculations:
MAG =
MAG = Maximum Available Gain MSG = Maximum Stable Gain Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
|S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
09/02/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
NE851M03 NONLINEAR MODEL SCHEMATIC
CCBPKG
0.15 pF
0.04 pF
CCB
LCPKG
0.7 nH
LBPKG Base
0.6 nH
0.004 nH
LB
Q1 LE
0.28 pF
CCE
Collector
CCEPKG
0.08 pF
0.004 nH
LEPKG
0.65 nH
CBEPKG
0.005 pF
Emitter
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 734.5e-18 166.6 1.00 41 0.597 39.37e-15 2.258 28.67 1.000 2.541 23.22e-3 27.52e-18 2.0 1.7 3.0 1.0 759e-6 4.0 2.51e-12 0.887 0.332 498.2e-15 0.367 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF* AF* Q1 0.122 0.1 0 0.75 0 0.5 13e-12 0.39 0.668 0.06 20 0 1.11 0 3 0 1
ADDITIONAL PARAMETERS
Parameters CCB CCE LB LE CCBPKG CCEPKG CBEPKG LBPKG LCPKG LEPKG NE851M03 0.04 pF 0.28 pF 0.004 nH 0.004 nH 0.15 pF 0.08 pF 0.005 pF 0.6 nH 0.7 nH 0.65 nH
AF and KF are 1/f noise parameters and are bias dependent. The appropriate values for the 1/f noise parameters (AF and KF) shall be chosen from the table below, according to the desired current range. IC = 5 mA AF KF 1.40 4.547e-15 IC = 10 mA 2.551 855.6e-12 IC = 15 mA 2.626 1.735e-9
For a better understanding on AF and KF parameters, please refer to AN1026.
MODEL TEST CONDITIONS Frequency: 0.1 to 6.0 GHz Bias: VCE = 1.5 V, IC = 1 mA to 9 mA Date: 09/2003
(1) Gummel-Poon Model
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
09/02/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
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Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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